Innovation Highlights or a long time, the difficulty in preparing large-size, high-quality epitaxial wafers has been the core bottleneck restricting the industrialization of gallium oxide. Previously, mainstream global technologies remained limited to 2-4 inch specifications, and immature homoepitaxy severely hindered cost control and large-scale application of devices.
The breakthrough of 8-inch gallium oxide homoepitaxial wafers by JiaRen Semiconductor will reshape the development trajectory of the gallium oxide industry in three aspects:
The size of epitaxial wafers directly determines the number of devices fabricated on a single wafer, serving as a fundamental prerequisite for mass production. Compared with prevailing 2-4 inch counterparts, the 8-inch gallium oxide homoepitaxial wafer enables substantially higher output of power devices per piece, effectively cutting unit costs of substrates, processing and packaging.
Homoepitaxy represents the optimal solution for high-performance gallium oxide device manufacturing. Perfect lattice matching between epitaxial layer and substrate reduces lattice mismatch and defect density, and greatly improves core device properties including breakdown voltage, on-resistance and switching speed. Featuring superior crystalline quality and low defect density, the product facilitates the application of gallium oxide in ultra-high voltage and high-power scenarios.
The full exploitation of gallium oxide’s performance advantages hinges on the capability to produce large-size, high-quality materials. This technological breakthrough not only enhances China’s global competitiveness in the fourth-generation semiconductor sector, but also accelerates technical upgrading of the worldwide gallium oxide industry, leading the global semiconductor industry into a new era of fourth-generation semiconductors.