Founder Microelectronics Inc.
Shenzhen Founder Microelectronics Co., Ltd., founded in December 2003, is a leading IDM enterprise in China’s third-generation semiconductor industry. The company is primarily engaged in the R&D, manufacturing, and sales of SiC wafers, devices, and modules, providing SiC chip product solutions for sectors such as new energy vehicles, photovoltaics and energy storage, UPS, industrial power supplies, AI computing, eVTOL, and robotics.
In August 2021, Shenzhen Major Industrial Investment Group Co., Ltd. took over Founder Microelectronics, committed to transforming it into a national hub for third-generation semiconductor manufacturing.
Adhering to legal compliance and integrity-driven operations, Founder Microelectronics pursues the mission of "making the digital world greener and the power world more dynamic." With a new team and a renewed collective spirit, the company embraces new responsibilities and embarks on a new journey, dedicated to promoting green and healthy industrial development, enabling a low-carbon, interconnected world, and ushering in a new era of ultra-efficient green energy.
Product 1
Development technology/material/manufacturing process nameFMIC's second-generation automotive-grade main-drive power SiC MOSFET chip
Innovation HighlightsFMIC' second-generation automotive-grade main drive power SiC MOSFET chip is a key achievement of a major Shenzhen project. Primarily used in new energy vehicle electric drives, it breaks the previous pattern where domestic NEV main drive SiC MOSFETs lagged behind international manufacturers. Its performance is on par with the latest generation of top-tier international products.
The chip has passed 3,000 hours of reliability certification — three times the industry standard requirement — offering superior safety and reliability. Its comprehensive performance surpasses ST's 4th generation products.
Packaged variants include TO247-4, TO247-4NL, TO263-7, TSCPAK, Q-DPAK, SSC, HPD, HPD MINI, SMIT, and TPAK. All are AEC-Q101 qualified and meet the AEC-Q Grade 0 standard.
1. High switching speed, low dynamic loss
2. Suitable for high-frequency applications, reducing system size
3. High operating junction temperature of 175°C
4. Pure resistive behavior at low currents, resulting in low losses
5. Low gate defects, high reliability, high and stable VTH threshold
6. Small parasitic capacitance, short propagation delay, narrow dead time, low waveform distortion
7. Low high-temperature on-resistance coefficient
8. Reliability test target: 3,000 hours
9. High breakdown voltage, supporting 800V–1000V DC electric drive systems
ApplicationsNew Energy Vehicle Electric Drive/OBC/DCDC/Air Conditioning Compressor?/PTC/Suspension
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