Archimedes Semiconductor(Hefei)Co.,Ltd.
Archimedes Semiconductor, headquartered in Hefei, provides IGBT and SiC discrete devices and power modules for new energy vehicles, photovoltaic, energy storage and OBC industries. We are committed to be the global leader of power semiconductors in the era of carbon neutrality& emission peak. Led by academicians of the Chinese Academy of Sciences, our main members served at global semiconductor leaders including Infineon, ON Semiconductor,Huawei, Vincotech, and Mitsubishi. We have gained over 600 million CNY from investors including Sungrow(300274.SZ),CHISAGESS, SG-Micro(300661.SZ) , Cellwise (300456.SZ), Zhongyu Energy (03633.HK) ,Changjiang Innovation and state-owned funds.
Product 1
Development technology/material/manufacturing process nameDiamond-Embedded Thermal Module
Innovation HighlightsAddresses the thermal bottleneck of NEV IGBT modules, where traditional substrates suffer from insufficient thermal conductivity and CTE mismatch, limiting power density and shortening service life. Adopts diamond-embedded thermal dissipation technology, compatible with existing packaging processes, with strong mass production potential. Diamond material delivers >5x higher thermal conductivity than traditional ceramics, perfectly CTE-matched to SiC/silicon chips, with 60% higher cooling efficiency. Enables IGBT module miniaturization & higher power density, reduces vehicle energy consumption, and boosts driving range & overall product competitiveness.
Development phase 所处阶段：工程开发阶段（小批量客户验证）
Applications 1.New Energy Vehicles Main drive inverters for 800V high-voltage platforms, on-board chargers (OBC), DC/DC converters
2. Photovoltaic & Energy Storage150–250kW power conversion systems (PCS), commercial & industrial inverters, uninterruptible power supplies (UPS), active power filters and static var generators (APF/SVG)
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process name550kW single-motor electric drive solution, adopting HPD packaged 12-core parallel 1200V/1mΩ SiC power module, operating parameters: 800V, 10kHz, 950Arms
Innovation HighlightsAMS010H12H1C3RB, rated at 1200V/1200A/1mΩ. It adopts HPD elliptical Pinfin packaging design. Silver sintering bonding is used between chips and AMB substrates, and DTS interconnection technology is applied on chip surfaces. The product features high current capacity, high reliability and long service life.
Development phase 产品处于开发阶段、预计2026年Q4量产。
ApplicationsFor single-motor electric drive applications of 550kW and above
Photo of exhibits recommended
Product 1
Development technology/material/manufacturing process nameAMS010H12D1C3PB, 1200V/1mΩ half-bridge single-sided molded SiC module
Innovation HighlightsThe 3rd generation semiconductor material-Silicon Carbide
Blocking Voltage 1200V, Low RDS(on), Low Switching Losses, Low Inductive Design, Ls≤5nH, Tvjop=175℃, High Performance Si3N4 Ceramic, Direct Cooled Cu PinFin Base Plate, Integrated PTC.
The product boasts high current capacity, high reliability and long service life.
Development phase 产品处于小批量状态
Photo of exhibits recommended